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Journal Articles

ESR characterization of activation of implanted phosphorus ions in silicon carbide

Isoya, Junichi*; Oshima, Takeshi; Oi, Akihiko; Morishita, Norio; Ito, Hisayoshi

Nuclear Instruments and Methods in Physics Research B, 206, p.965 - 968, 2003/05

https://doi.org/10.1016/S0168-583X(03)00903-0
 Times Cited Count：8 Percentile：50.24(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Investigation of vacancy-type defects in P$$^{+}$$-implanted 6H-SiC using monoenergetic positron beams

Uedono, Akira*; Oshima, Takeshi; Ito, Hisayoshi; Suzuki, Ryoichi*; *; Tanigawa, Shoichiro*; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Mikado, Tomohisa*

Japanese Journal of Applied Physics, Part 1, 37(5A), p.2422 - 2429, 1998/05

https://doi.org/10.1143/JJAP.37.2422
 Times Cited Count：13 Percentile：53.6(Physics, Applied)

no abstracts in English

Journal Articles

Hot-implantation of phosphorus ions into 6H-SiC

Abe, Koji*; Oshima, Takeshi; Ito, Hisayoshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Iwami, Motohiro*

Mater. Sci. Forum, 264-268, p.721 - 724, 1998/00

no abstracts in English

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